Recent discovery by Shoucheng Zhang, a physics professor at Stanford Institute for Materials and Energy Sciences (SIMES) will definitely prove to be a great lift on the over-reliance of electronic devices on silicon (Si).
It was reported few days ago by natureworldnews, the report outlines that;
A team of Theoretical has said that a single layer of tin atoms acts as topological insulator and conducts electricity with 100 percent efficiency. If proven, the new super material called ‘stanene’, could be used in increase speed and reduce power consumption and heat produced in electronic devices.
It was further explained in the report thus;
Stanene, a new material containing a thin layer of tin could potentially replace Silicon from the heart of transistors. A team of theoretical physicists said that a single layer of tin atoms can conduct electricity with 100 percent efficiency at room temperature.
This will be great considering how much electronic devices rely on Silicon (Si), the eighth most common element in the universe by mass. if this discovery is further worked on, it may end up being the next big thing in 2014.
Read the full story here.
Image credit belongs to natureworldnews.com
